Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N...

Materials Today: Proceedings 2018 Vol. 5; Iss. 1

Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement

Prakash, Nisha, Kumar, Gaurav, Barvat, Arun, Anand, Kritika, Choursia, B., Pal, Prabir, Khanna, Suraj P.
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Volume:
5
Year:
2018
Language:
english
Journal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2017.09.210
File:
PDF, 757 KB
english, 2018
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