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High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors
Charles, M., Baines, Y., Bavard, A., Bouveyron, R.Volume:
483
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.11.004
Date:
February, 2018
File:
PDF, 1.23 MB
english, 2018