High growth rate GaN on 200 mm silicon by metal-organic...

High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Charles, M., Baines, Y., Bavard, A., Bouveyron, R.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
483
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.11.004
Date:
February, 2018
File:
PDF, 1.23 MB
english, 2018
Conversion to is in progress
Conversion to is failed