Deep levels in the MBE ZnO:As/ n -GaN diodes – Photoluminescence, electrical properties and deep level transient spectroscopy
Zielony, E., Przezdziecka, E., Placzek-Popko, E., Lisowski, W., Stachowicz, M., Paradowska, K.M., Jakiela, R., Kozanecki, A.Volume:
742
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2018.01.250
Date:
April, 2018
File:
PDF, 1024 KB
english, 2018