Transient Leakages of Gate Oxide Due to Charge Traps and...

IEEE Transactions on Semiconductor Manufacturing 2017 / 11 Vol. 30; Iss. 4

Transient Leakages of Gate Oxide Due to Charge Traps and Phosphorus Contaminants Induced During Gate Oxidation Processing

Sheng, Lieyi, Williams, Brett, Haskett, Thomas, Glines, Eddie
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Volume:
30
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/TSM.2017.2752718
Date:
November, 2017
File:
PDF, 2.30 MB
english, 2017
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