Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors
Hu, Yaoqiao, Yip, Pak San, Tang, Chak Wah, Lau, Kei May, Li, QiangVolume:
33
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aaa224
Date:
April, 2018
File:
PDF, 2.11 MB
english, 2018