Influence of InGaN layer growth temperature on luminescence...

Materials Research Express 2018 / 02 Vol. 5; Iss. 2

Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

Wang, Xiaowei, Yang, Jing, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Liu, Wei, Liang, Feng, Liu, Shuangtao, Xing, Yao, Wang, Wenjie, Li, Mo
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Volume:
5
Language:
english
Journal:
Materials Research Express
DOI:
10.1088/2053-1591/aaaef2
Date:
February, 2018
File:
PDF, 1.44 MB
english, 2018
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