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[IEEE 2017 IEEE 12th International Conference on ASIC (ASICON) - Guiyang (2017.10.25-2017.10.28)] 2017 IEEE 12th International Conference on ASIC (ASICON) - Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, LirongYear:
2017
Language:
english
DOI:
10.1109/ASICON.2017.8252459
File:
PDF, 685 KB
english, 2017