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Large Area In-Situ Oxide, GaN Interlayer Based Vertical Trench MOSFET (OG-FET)
Ji, Dong, Gupta, Chirag, Agarwal, Anchal, Chan, Silvia H., Lund, Cory, Li, Wenwen, Keller, Stacia, Mishra, Umesh K., Chowdhury, SrabantiYear:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2813312
File:
PDF, 809 KB
english, 2018