Barium Zirconate Nickelate as the Gate Dielectric for...

IEEE Transactions on Electron Devices 2018 / 2 Vol. 65; Iss. 2

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

Lee, Cheng-Jung, Lee, Ke-Jing, Chang, Yu-Chi, Wang, Li-Wen, Chou, Der-Wei, Wang, Yeong-Her
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Volume:
65
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2786225
Date:
February, 2018
File:
PDF, 1.14 MB
english, 2018
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