[IEEE 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Chengdu, China (2017.7.4-2017.7.7)] 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Fast neutron irradiation effects of silicon MOS-controlled thyristor
Li, Lei, Li, Zehong, Ren, Min, Zhang, Jinping, Gao, Wei, Lin, YuciYear:
2017
Language:
english
DOI:
10.1109/ipfa.2017.8060223
File:
PDF, 768 KB
english, 2017