[IEEE 2017 Silicon Nanoelectronics Workshop (SNW) - Kyoto...

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[IEEE 2017 Silicon Nanoelectronics Workshop (SNW) - Kyoto (2017.6.4-2017.6.5)] 2017 Silicon Nanoelectronics Workshop (SNW) - High performance Ge pMOSFETs with simultaneous mobility-412 cm 2 /V-s, EOT −0.5 nm, Ion/Ioff∼10 5 , gate leakage∼10 −4 A/cm 2 by modulating interfacial layer using oxygen deficient HfOx

Yi, Shih-Han, Huang, Jiayi, Hsu, Chia-Wei, Wu, Tzung-Yu, Ruan, Dun-Bao, Chang-Liao, Kuei-Shu
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Year:
2017
Language:
english
DOI:
10.23919/SNW.2017.8242272
File:
PDF, 1.86 MB
english, 2017
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