Deep level defects in Ge-doped (010) β-Ga 2...

Journal of Applied Physics 2018 / 04 Vol. 123; Iss. 16

Deep level defects in Ge-doped (010) β-Ga 2 O 3 layers grown by plasma-assisted molecular beam epitaxy

Farzana, Esmat, Ahmadi, Elaheh, Speck, James S., Arehart, Aaron R., Ringel, Steven A.
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Volume:
123
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5010608
Date:
April, 2018
File:
PDF, 1.39 MB
english, 2018
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