Erratum: “Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors” [AIP Advances 7, 035321 (2017)]
Yu, Jiadong, Hao, Zhibiao, Li, Linsen, Wang, Lai, Luo, Yi, Wang, Jian, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Li, HongtaoVolume:
7
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.5018476
Date:
December, 2017
File:
PDF, 904 KB
english, 2017