The Instability of the CV Characteristics’ Capacitance When...

Russian Microelectronics 2017 / 12 Vol. 46; Iss. 8

The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them

Enisherlova, K. L., Goryachev, V. G., Saraykin, V. V., Kapilin, S. A.
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Volume:
46
Language:
english
Journal:
Russian Microelectronics
DOI:
10.1134/S1063739717080066
Date:
December, 2017
File:
PDF, 757 KB
english, 2017
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