Single-electron transistor with an island formed by several dopant phosphorus atoms
Dagesyan, S. A., Shorokhov, V. V., Presnov, D. E., Soldatov, E. S., Trifonov, A. S., Krupenin, V. A., Snigirev, O. V.Volume:
72
Language:
english
Journal:
Moscow University Physics Bulletin
DOI:
10.3103/S0027134917050058
Date:
September, 2017
File:
PDF, 1.25 MB
english, 2017