![](/img/cover-not-exists.png)
Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs
Kutsuki, Katsuhiro, Murakami, Yuki, Watanabe, Yukihiko, Onishi, Toru, Yamamoto, Kensaku, Fujiwara, Hirokazu, Ito, TakahiroVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.04FR02
Date:
April, 2018
File:
PDF, 1.04 MB
english, 2018