Influence of basal-plane dislocation structures on...

Japanese Journal of Applied Physics 2018 / 04 Vol. 57; Iss. 4S

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

Hayashi, Shohei, Yamashita, Tamotsu, Senzaki, Junji, Miyazato, Masaki, Ryo, Mina, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumura, Hajime
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.04FR07
Date:
April, 2018
File:
PDF, 1.56 MB
english, 2018
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