Analysis of reverse gate leakage mechanism of AlGaN/GaN...

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Solid-State Electronics 2018 / 3

Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N 2 plasma surface treatment

Liu, Hui, Zhang, Zongjing, Luo, Weijun
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2018.03.003
Date:
March, 2018
File:
PDF, 1.14 MB
english, 2018
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