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Ferroelectric HfZrO x -based MoS 2 negative capacitance transistor with ITO capping layers for steep-slope device application
Xu, Jing, Jiang, Shu-Ye, Zhang, Min, Zhu, Hao, Chen, Lin, Sun, Qing-Qing, Zhang, David WeiVolume:
112
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.5019418
Date:
March, 2018
File:
PDF, 1.05 MB
english, 2018