GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer
Liu, L. N., Choi, H. W., Xu, J. P., Tang, W. M., Lai, P. T.Volume:
65
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2017.2777938
Date:
January, 2018
File:
PDF, 1.72 MB
english, 2018