Influence of Substrate Misorientation on the Composition...

Semiconductors 2018 / 1 Vol. 52; Iss. 1

Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100)

Seredin, P. V., Lenshin, A. S., Fedyukin, A. V., Arsentyev, I. N., Zhabotinsky, A. V., Nikolaev, D. N., Leiste, H., Rinke, M.
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Volume:
52
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782618010207
Date:
January, 2018
File:
PDF, 376 KB
english, 2018
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