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Tunnel field-effect transistor charge-trapping memory with steep subthreshold slope and large memory window
Kino, Hisashi, Fukushima, Takafumi, Tanaka, TetsuVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.04FE07
Date:
April, 2018
File:
PDF, 1.09 MB
english, 2018