A transient simulation approach to obtaining...

Japanese Journal of Applied Physics 2018 / 04 Vol. 57; Iss. 4S

A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps

Fukuda, Koichi, Asai, Hidehiro, Hattori, Junichi, Shimizu, Mitsuaki, Hashizume, Tamotsu
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.04FG04
Date:
April, 2018
File:
PDF, 979 KB
english, 2018
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