Middle Electrode in a Vertical Transistor Structure Using...

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Electronic Materials Letters 2018 / 3

Middle Electrode in a Vertical Transistor Structure Using an Sn Layer by Thermal Evaporation

Nogueira, Gabriel Leonardo, da Silva Ozório, Maiza, da Silva, Marcelo Marques, Morais, Rogério Miranda, Alves, Neri
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Language:
english
Journal:
Electronic Materials Letters
DOI:
10.1007/s13391-018-0034-1
Date:
March, 2018
File:
PDF, 2.68 MB
english, 2018
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