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[IEEE 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Burlingame, CA, USA (2017.10.16-2017.10.19)] 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - High-density SRAM voltage scaling enabled by inserted-oxide FinFET technology
Wu, Yi-Ting, Chiang, Meng-Hsueh, Chen, Jone F., Ding, Fei, Connelly, Daniel, Liu, Tsu-Jae KingYear:
2017
Language:
english
DOI:
10.1109/S3S.2017.8309217
File:
PDF, 1.50 MB
english, 2017