[IEEE 2017 International Conference on Trends in Electronics and Informatics (ICOEI) - Tirunelveli, India (2017.5.11-2017.5.12)] 2017 International Conference on Trends in Electronics and Informatics (ICEI) - Random dopant induced threshold voltage variation analysis of asymmetric spacer FinFETs
Gehlawat, Navdeep, Saini, GauravYear:
2017
Language:
english
DOI:
10.1109/ICOEI.2017.8300848
File:
PDF, 305 KB
english, 2017