Pt Gate Sink-In Process Details Impact on InP HEMT DC and...

IEEE Transactions on Semiconductor Manufacturing 2017 / 11 Vol. 30; Iss. 4

Pt Gate Sink-In Process Details Impact on InP HEMT DC and RF Performance

Saranovac, Tamara, Hambitzer, Anna, Ruiz, Diego C., Ostinelli, Olivier, Bolognesi, C. R.
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Volume:
30
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/TSM.2017.2749479
Date:
November, 2017
File:
PDF, 1.20 MB
english, 2017
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