Novel Magnetic Tunneling Junction Memory Cell With Negative...

IEEE Transactions on Electron Devices 2017 / 12 Vol. 64; Iss. 12

Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect

Zeng, Lang, Gao, Tianqi, Zhang, Deming, Peng, Shouzhong, Wang, Lezhi, Gong, Fanghui, Qin, Xiaowan, Long, Mingzhi, Zhang, Youguang, Wang, Kang L., Zhao, Weisheng
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2017.2761877
Date:
December, 2017
File:
PDF, 1.90 MB
english, 2017
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