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High-power AlGaN∕GaN HEMTs on resistive silicon substrate
Hoël, V., Vellas, N., Gaquière, C., De Jaeger, J.C., Cordier, Y., Semond, F., Natali, F., Massies, J.Volume:
38
Year:
2002
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20020522
File:
PDF, 361 KB
english, 2002