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[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Statistical analysis on performance degradation of 90 nm bulk Si MOS devices irradiated by heavy ions
Zhexuan Ren,, Xia An,, Wu, Weikang, Zhang, Xing, Ru Huang,Year:
2016
Language:
english
DOI:
10.1109/icsict.2016.7998662
File:
PDF, 2.38 MB
english, 2016