[IEEE 2017 Silicon Nanoelectronics Workshop (SNW) - Kyoto (2017.6.4-2017.6.5)] 2017 Silicon Nanoelectronics Workshop (SNW) - Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory
Kim, Seunghyun, Kim, Do-Bin, Yu, Eunseon, Lee, Sang-Ho, Cho, Seongjae, Park, Byung-GookYear:
2017
Language:
english
DOI:
10.23919/SNW.2017.8242306
File:
PDF, 1.22 MB
english, 2017