CMOS integration of high- k...

Japanese Journal of Applied Physics 2018 / 04 Vol. 57; Iss. 4S

CMOS integration of high- k /metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

Litta, Eugenio Dentoni, Ritzenthaler, Romain, Schram, Tom, Spessot, Alessio, O’Sullivan, Barry, Machkaoutsan, Vladimir, Fazan, Pierre, Ji, Yunhyuck, Mannaert, Geert, Lorant, Christophe, Sebaai, Farid,
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.04FB08
Date:
April, 2018
File:
PDF, 1.43 MB
english, 2018
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