Formation of high-Sn content polycrystalline GeSn films by...

Chinese Physics B 2017 / 10 Vol. 26; Iss. 11

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Zhang, Lu, Hong, Hai-Yang, Wang, Yi-Sen, Li, Cheng, Lin, Guang-Yang, Chen, Song-Yan, Huang, Wei, Wang, Jian-Yuan
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Volume:
26
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/26/11/116802
Date:
October, 2017
File:
PDF, 1.92 MB
english, 2017
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