Confined selective lateral epitaxial growth of 16-nm thick...

Applied Surface Science 2018 / 07 Vol. 445

Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Khazaka, Rami, Bogumilowicz, Yann, Rouchon, Denis, Boutry, Hervé, Chalupa, Zdenek, Lapras, Valérie, Prévitali, Bernard, Chevalier, Nicolas, Papon, Anne Marie, David, Sylvain, Maitrejean, Sylvain
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Volume:
445
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2018.03.104
Date:
July, 2018
File:
PDF, 1.24 MB
english, 2018
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