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Structural and electrical properties of Ge-on-Si(001) layers with ultra heavy n-type doping grown by MBE
Yurasov, D.V., Antonov, A.V., Drozdov, M.N., Yunin, P.A., Andreev, B.A., Bushuykin, P.A., Baydakova, N.A., Novikov, A.V.Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.03.037
Date:
March, 2018
File:
PDF, 742 KB
english, 2018