Suppression of Punch-Through Current in 3 kV 4H-SiC...

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IEEE Journal of the Electron Devices Society 2018

Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer

Mori, Seigo, Aketa, Masatoshi, Sakaguchi, Takui, Asahara, Hirokazu, Nakamura, Takashi, Kimoto, Tsunenobu
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Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2819681
File:
PDF, 929 KB
english, 2018
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