The optoelectronic properties of the ternary B x In 1-x As...

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Optik - International Journal for Light and Electron Optics 2018 / 3

The optoelectronic properties of the ternary B x In 1-x As matched on GaAs substrate for laser diode application: Theoretical study with TB-mBJ approximation

Khennous, Esmaa, Abid, Hamza, Benchehima, Miloud, Benzina, Amina
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Language:
english
Journal:
Optik
DOI:
10.1016/j.ijleo.2018.03.090
Date:
March, 2018
File:
PDF, 1.78 MB
english, 2018
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