Post-annealed silicon nanocrystal formation on substoichiometric SiO x N y ( x < 2, y < 1) layers deposited in SiH 4 -N 2 O radiofrequency discharges
Bedjaoui, M., Despax, B., Caumont, M., Bonafos, C.Volume:
34
Language:
english
Journal:
The European Physical Journal Applied Physics
DOI:
10.1051/epjap:2006050
Date:
May, 2006
File:
PDF, 461 KB
english, 2006