Light output improvement of GaN-based light-emitting diodes...

Journal of Semiconductors 2018 / 04 Vol. 39; Iss. 4

Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

Li, Zengcheng, Feng, Bo, Deng, Biao, Liu, Legong, Huang, Yingnan, Feng, Meixin, Zhou, Yu, Zhao, Hanmin, Sun, Qian, Wang, Huaibing, Yang, Xiaoli, Yang, Hui
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Volume:
39
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/39/4/044002
Date:
April, 2018
File:
PDF, 1.20 MB
english, 2018
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