Effect of defect creation and migration on hump...

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Solid-State Electronics 2018 / 3

Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

Cho, Yong-Jung, Kim, Woo-Sic, Lee, Yeol-Hyeong, Park, Jeong Ki, Kim, Geon Tae, Kim, Ohyun
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2018.03.009
Date:
March, 2018
File:
PDF, 2.70 MB
english, 2018
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