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Effects of alloy composition and Si-doping on vacancy defect formation in (In x Ga 1–x ) 2 O 3 thin films
Prozheeva, V., Hölldobler, R., von Wenckstern, H., Grundmann, M., Tuomisto, F.Volume:
123
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5022245
Date:
March, 2018
File:
PDF, 926 KB
english, 2018