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Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance
McCrory, D. J., Lenahan, P. M., Nminibapiel, D. M., Veksler, D., Ryan, J. T., Campbell, J. P.Year:
2018
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2018.2820907
File:
PDF, 798 KB
english, 2018