MOCVD Growth of High Quality InGaAs HEMT Layers on Large...

IEEE Transactions on Semiconductor Manufacturing 2017 / 11 Vol. 30; Iss. 4

MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS

Nguyen, Xuan Sang, Yadav, Sachin, Lee, Kwang Hong, Kohen, David, Kumar, Annie, Made, Riko I., Lee, Kenneth Eng Kian, Chua, Soo Jin, Gong, Xiao, Fitzgerald, Eugene A.
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Volume:
30
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/TSM.2017.2756684
Date:
November, 2017
File:
PDF, 1.89 MB
english, 2017
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