Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN,...

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International Journal of Electronics Letters 2018 / 04

Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN, 4H-SiC-based IMPATT diode

Ghivela, Girish Chandra, Sengupta, Joydeep, Mitra, Monojit
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Language:
english
Journal:
International Journal of Electronics Letters
DOI:
10.1080/21681724.2018.1460869
Date:
April, 2018
File:
PDF, 2.10 MB
english, 2018
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