Single-event burnout hardening of planar power MOSFET with partially widened trench source
Lu, Jiang, Liu, Hainan, Cai, Xiaowu, Luo, Jiajun, Li, Bo, Li, Binhong, Wang, Lixin, Han, ZhengshengVolume:
39
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/39/3/034003
Date:
March, 2018
File:
PDF, 1.85 MB
english, 2018