![](/img/cover-not-exists.png)
[IEEE 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Burlingame, CA (2017.10.16-2017.10.19)] 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Lateral spacers influence on the effective channel length of junctionless nanowire transistors
Trevisoli, Renan, Doria, Rodrigo T., de Souza, Michelly, Pavanello, Marcelo A.Year:
2017
Language:
english
DOI:
10.1109/S3S.2017.8309260
File:
PDF, 1.34 MB
english, 2017