[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Improvement in noise characteristics of GaAsSb-based backward diodes by using a modified junction structure
Takahashi, Tsuyoshi, Sato, Masaru, Shiba, Shoichi, Nakasha, Yasuhiro, Hara, Naoki, Iwai, Taisuke, Okamoto, Naoya, Watanabe, KeijiYear:
2016
Language:
english
DOI:
10.1109/iciprm.2016.7528856
File:
PDF, 19 KB
english, 2016