![](/img/cover-not-exists.png)
[IEEE 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2017.6.29-2017.6.30)] 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Investigation of thermal runaway of reverse-biased silicon carbide schottky barrier diode
Nakagawa, M., Mori, S., Nanen, Y., Aketa, M., Asahara, H., Nakamura, T.Year:
2017
Language:
english
DOI:
10.1109/imfedk.2017.7998057
File:
PDF, 303 KB
english, 2017