Modeling of NBTI Kinetics in Replacement Metal Gate Si and...

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IEEE Transactions on Electron Devices 2018

Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETs--Part-II: AC Stress and Recovery

Parihar, Narendra, Southwick, Richard G., Wang, Miaomiao, Stathis, James H., Mahapatra, Souvik
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2819020
File:
PDF, 2.16 MB
english, 2018
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