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Enhancement of tunneling magnetoresistance by inserting a...

Applied Physics Letters 2018 / 04 Vol. 112; Iss. 15

Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L1 0 -FePd perpendicular magnetic tunnel junctions

Zhang, De-Lin, Schliep, Karl B., Wu, Ryan J., Quarterman, P., Reifsnyder Hickey, Danielle, Lv, Yang, Chao, Xiaohui, Li, Hongshi, Chen, Jun-Yang, Zhao, Zhengyang, Jamali, Mahdi, Mkhoyan, K. Andre, Wang
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Volume:
112
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.5019193
Date:
April, 2018
File:
PDF, 1.22 MB
english, 2018
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